• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A method of manufacturing a thin film of an oxidic superconducting material in accordance with a pattern, in which a pattern is manufactured by means of etching using reactive ions and a mask of aluminium oxide or silicon oxide, said method enabling patterns having line widths smaller than 2 mu m to be manufactured with great accuracy without influencing the composition of the superconducting thin film in such a manner that the superconducting properties deteriorate.
    公开号:SU1662361A3
    申请号:SU884613160
    申请日:1988-12-13
    公开日:1991-07-07
    发明作者:Герарда Жозефа Хейман Марица
    申请人:Н.В.Филипс Глоэлампенфабрикен (Фирма)；
    IPC主号:
    专利说明:

    The invention relates to the technology of microelectronics and can be used to create devices based on superconducting materials.
    The purpose of the invention is to expand the scope of application of the method.
    According to the proposed method, the high-temperature oxide superconducting film does not come into contact with the resist or any solvent. It is in contact only with the inorganic masking layer of SiO or e at temperatures so low that diffusion of aluminum or silicon into the superconducting layer cannot take place. Thus, the proposed method allows one to form a pattern with micron-sized elements in films of high-temperature oxide superconducting materials without degrading their superconducting properties, for example, lowering the critical temperature. The use of plasma containing at least one of the compounds HC1 or C1g for plasma etching of high-temperature oxide superconducting materials is due to the fact that the difference in the etching rate in the plasma is
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    The composition of the inorganic makiruyushchie layers of SiO or A120 and high-temperature oxide superconductors are large enough to form a pattern by selective etching without using additional layers that stop etching.
    According to the proposed method, high-temperature oxide superconducting materials of the general formula can be used.
    YBazCu307 tfflFtf,
    where tf. 0 ... 1, 8 0.1 ... O, 5
    Partial replacement of fluorine in the indicated compositional formula of oxygen up to one atom leads to an increase in the critical temperature. In addition, yttrium can be substituted by one or more rare earth metals, and barium can be replaced by another alkaline earth metal, for example, strontium. The resistive mask can be obtained by any known method, including using screen printing, photo-, electron- and X-ray lithography. The use of a mixture of fluoroform and argon for transferring a pattern from a resist layer to an inorganic plasma masking layer is due to the fact that the etching rate of the resist in the plasma of this composition is much less than the etching rate of the inorganic SiO masking layer or.
    Removing the resist in an oxygen plasma also avoids the contact of the superconducting film with organic solvents or other liquid reagents, leading to a deterioration of the superconducting properties of the material used. The implementation of the method is possible using both positive and negative resists.
    Example 1. On a substrate of SrTiO, Ј with a surface area of 5 cmg, using a triode sputtering layer is applied 8 -filter 0.3 µm and processed in oxygen at 850 and the resulting layer is a high-temperature oxide superconducting layer with a critical temperature v93 K. A layer of al0 oxide is then applied.
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    mini e 0.3 microns thick by high-frequency ion spraying. After that, a layer of Novolak and Quinoidazide AZ-1350J is applied using the centrifuge / ny layer. The resist layer is dried at a temperature of 80 ° C for 20 minutes and exposed through a photomask with ultraviolet radiation for 45 seconds. Then the resist layer is heated for 5 minutes to a temperature of 120 ° C. After that, the resist layer is developed in a 0.1 N solution of sodium hydroxide in water, washed, dried and maintained at a temperature of 120 ° C for 15 minutes .
    The layer is subjected to plasma etching of a mixture of fluoroform CHFo and argon in a volume ratio of 1: 4 through a resistive mask. Etching is carried out at a temperature of 50 ° C, a pressure of 1 Pa and a power density of 1 W / cm. In this case, the etching rate is 8 times higher than the etching rate of the material of the superconducting layer. After that, the substrate is heated to a temperature of 180 ° C in a nitrogen plasma at a pressure of 100 Pa and a power density of 6 W / cm2, and a layer of resist in an oxygen plasma at the same pressure and power density of 2 W / cm2 is removed for 25 minutes . Then a layer of high-temperature oxide superconducting material is etched in HC1 plasma at a temperature of 50 C, pressure / 1 Pa-and power density of 2 W / cm2 for 10-12 minutes. At the same time, the etching rate of the superconducting material is 1.8 µm / h, and the etching rate of A 1.2.0c is 0.6 µm / h. The remaining layer is removed by plasma etching of a mixture of fluoroform and argon under these conditions for l 6 minutes.
    As a result, a pattern with a line width of less than 2.0 µm was obtained in the high-temperature oxide superconducting film without reducing the critical temperature and deteriorating the superconducting properties of the material used.
    Example 2. Similar to example 1, however, as a inorganic masking layer, instead of using a layer thickness of 0.5 µm, obtained by spraying or chemical vapor deposition at a temperature of 300 ° C.
    权利要求:
    Claims (2)
    [1]
    1. A method of forming a pattern comprising applying a functional layer to an electrically isolated substrate, applying an inorganic silicon oxide or / and alumina mask layer, forming a resistive mask by applying a resist layer, selectively exposing and developing it, transferring the resistive mask pattern to the inorganic masking layer by etching in the plasma a mixture of fluoroform and argon through a resistive mask, removing the resist layer by etching in an oxygen plasma,
    five
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    selective plasma etching of the functional layer and removal of the inorganic masking layer by plasma etching of a mixture of fluoroform and argon, characterized in that, in order to expand the field of application of the method, high-temperature oxide superconducting material of the general formula tf & F is used as the material of the functional layer. where ot 0. ..1, Ј 0.1 ... 0.5, and plasma etching of the functional layer is carried out in a chlorine-containing plasma.
    [2]
    2. A method according to claim 1, characterized in that the chlorine-containing plasma contains at least one of the compounds HC1 or C1
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    Lyman et al.1981|Lift‐off of thick metal layers using multilayer resist
    Huggett et al.1983|Development of silver sensitized germanium selenide photoresist by reactive sputter etching in SF6
    US5075200A|1991-12-24|Process of forming superconductive wiring strip
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    KR20010113735A|2001-12-28|Method for producing a pattern suitable for forming sub-micron width metal lines
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    McCallum et al.1999|Integration considerations for 193nm photoresists
    同族专利:
    公开号 | 公开日
    JPH01214074A|1989-08-28|
    CN1034636A|1989-08-09|
    NL8703039A|1989-07-17|
    EP0324996B1|1993-03-17|
    EP0324996A1|1989-07-26|
    US4933318A|1990-06-12|
    DE3879461T2|1993-09-09|
    DE3879461D1|1993-04-22|
    KR890011124A|1989-08-12|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US4657844A|1983-06-27|1987-04-14|Texas Instruments Incorporated|Plasma developable negative resist compositions for electron beam, X-ray and optical lithography|
    JPH061769B2|1983-08-10|1994-01-05|株式会社日立製作所|Alumina film patterning method|
    US4560435A|1984-10-01|1985-12-24|International Business Machines Corporation|Composite back-etch/lift-off stencil for proximity effect minimization|
    US4683024A|1985-02-04|1987-07-28|American Telephone And Telegraph Company, At&T Bell Laboratories|Device fabrication method using spin-on glass resins|
    US4702795A|1985-05-03|1987-10-27|Texas Instruments Incorporated|Trench etch process|
    US4687543A|1986-02-21|1987-08-18|Tegal Corporation|Selective plasma etching during formation of integrated circuitry|JPH01171246A|1987-12-25|1989-07-06|Mitsubishi Metal Corp|Formation of superconductor interconnection|
    US5234633A|1987-12-28|1993-08-10|Canon Kabushiki Kaisha|Cast molding die and process for producing information recording medium using the same|
    US5041188A|1989-03-02|1991-08-20|Santa Barbara Research Center|High temperature superconductor detector fabrication process|
    KR930004024B1|1990-04-27|1993-05-19|삼성전기 주식회사|Manufacturing method of super conductor ic|
    US5173678A|1990-09-10|1992-12-22|Gte Laboratories Incorporated|Formed-to-shape superconducting coil|
    CA2053549A1|1990-11-15|1992-05-16|John A. Agostinelli|Construction of high temperature josephson junction device|
    JPH0697522A|1990-11-30|1994-04-08|Internatl Business Mach Corp <Ibm>|Manufacture of thin film of super- conducting material|
    DE4038894C1|1990-12-06|1992-06-25|Dornier Gmbh, 7990 Friedrichshafen, De|
    US5212147A|1991-05-15|1993-05-18|Hewlett-Packard Company|Method of forming a patterned in-situ high Tc superconductive film|
    DE4120766C2|1991-06-24|1993-06-17|Forschungszentrum Juelich Gmbh, 5170 Juelich, De|
    US5286336A|1991-07-23|1994-02-15|Trw Inc.|Submicron Josephson junction and method for its fabrication|
    DE4127701C2|1991-08-21|1995-11-30|Siemens Ag|Method for producing a structured thin layer from a high-temperature superconductor and device for carrying out the method|
    JPH05251777A|1991-12-13|1993-09-28|Sumitomo Electric Ind Ltd|Superconducting field-effect type element and manufacture thereof|
    KR970052022A|1995-12-30|1997-07-29|김주용|SOH eye substrate manufacturing method|
    US6331680B1|1996-08-07|2001-12-18|Visteon Global Technologies, Inc.|Multilayer electrical interconnection device and method of making same|
    US6001268A|1997-06-05|1999-12-14|International Business Machines Corporation|Reactive ion etching of alumina/TiC substrates|
    DE19733391C2|1997-08-01|2001-08-16|Siemens Ag|Structuring process|
    EP0907203A3|1997-09-03|2000-07-12|Siemens Aktiengesellschaft|Patterning method|
    US8852959B2|2011-12-19|2014-10-07|Northrup Grumman Systems Corporation|Low temperature resistor for superconductor circuits|
    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    NL8703039A|NL8703039A|1987-12-16|1987-12-16|PROCESS FOR PATTERNALLY MANUFACTURING A THIN LAYER FROM OXIDIC SUPER CONDUCTIVE MATERIAL|
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